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2SB1668
Transistors
For Power amplification (-100V, -8A)
2SB1668
Structure PNP Silicon Epitaxial Planar Transistor (Darlington connection) External dimensions (Unit : mm)
TO-220FN
10.0
4.5
3.2
2.8
Features 1) High hFE by darlington connection. 2) Built-in resistors between base and emitter. 3) Damper diode is incorporated.
(1)Base (2)Collector (3)Emitter
15.0
12.0
8.0 5.0
1.2
1.3
14.0
0.8 2.54
(1) (2) (3)
2.54
0.75
2.6
Applications Relay drive Motor drive
Complements
PNP 2SB1668 NPN 2SD2607
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
1 t=100ms
Packaging specifications and hFE
Limits -100 -100 -7 -8 -10 2 30 150 Unit V V V A A
1
Symbol VCBO VCEO VEBO DC Pulse IC ICP PC Tj Tstg
Package Type 2SB1668 Code Basic ordering unit (pieces)
Taping - 500
W(Ta=25C) W(Tc=25C) C C
-55 to +150
Electrical characteristics (Ta=25C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. Typ. Max. Unit -100 -100 -7 - - - 1 - - - - - - - - - 12 90 - - - -10 -3 1.5 20 - - V V V A mA V K pF IC=-5mA IC=-50A IE=-5mA VCB=-100V VEB=-5V IC/IB=-3A /-6mA VCE=-3V, IC=-2A VCB=-10V, IE=0A, f=1MHz Conditions
MHz VCE=-5V, IE=0.5A, f=10MHz
1/1
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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